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| TIC246 SERIES SILICON TRIACS Copyright (c) 2000, Power Innovations Limited, UK DECEMBER 1971 - REVISED JUNE 2000 G G G G G G High Current Triacs 16 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage 125 A Peak Current Max IGT of 50 mA (Quadrants 1 - 3) Pin 2 is in electrical contact with the mounting base. MDC2ACA TO-220 PACKAGE (TOP VIEW) MT1 MT2 G 1 2 3 absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TIC246D Repetitive peak off-state voltage (see Note 1) TIC246M TIC246S TIC246N Full-cycle RMS on-state current at (or below) 70C case temperature (see Note 2) Peak on-state surge current full-sine-wave at (or below) 25C case temperature (see Note 3) Peak gate current Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) ITSM IGM TC Tstg TL VDRM SYMBOL VALUE 400 600 700 800 16 125 1 -40 to +110 -40 to +125 230 A A A C C C V UNIT NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70C derate linearly to 110C case temperature at the rate of 400 mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER IDRM Repetitive peak off-state current Gate trigger current VD = rated VDRM Vsupply = +12 V IGT Vsupply = +12 V Vsupply = -12 V Vsupply = -12 V Vsupply = +12 V VGT Gate trigger voltage On-state voltage Holding current Vsupply = +12 V Vsupply = -12 V Vsupply = -12 V VT IH ITM = 22.5 A Vsupply = +12 V Vsupply = -12 V TEST CONDITIONS IG = 0 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 IG = 50mA IG = 0 IG = 0 TC = 110C tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s (see Note 4) Init' ITM = 100 mA Init' ITM = -100 mA 12 -19 -16 34 0.8 -0.8 -0.8 0.9 1.4 22 -12 2 -2 -2 2 1.7 40 -40 V mA V MIN TYP MAX 2 50 -50 -50 mA UNIT mA All voltages are with respect to Main Terminal 1. NOTE 4: This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIC246 SERIES SILICON TRIACS DECEMBER 1971 - REVISED JUNE 2000 electrical characteristics at 25C case temperature (unless otherwise noted) (continued) PARAMETER IL dv/dt dv/dt(c) di/dt Latching current Critical rate of rise of off-state voltage Critical rise of commutation voltage Critical rate of rise of on -state current Vsupply = +12 V Vsupply = -12 V VD = Rated VD VD = Rated VD di/dt = 0.5 IT(RMS)/ms VD = Rated VD diG/dt = 50 mA/s IGT = 50 mA TEST CONDITIONS (see Note 5) IG = 0 TC = 110C TC = 80C IT = 1.4 IT(RMS) TC = 110C 1.2 400 9 100 MIN TYP MAX 80 -80 UNIT mA V/s V/s A/s All voltages are with respect to Main Terminal 1. NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: RG = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.9 62.5 UNIT C/W C/W TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs CASE TEMPERATURE 1000 TC08AA GATE TRIGGER VOLTAGE vs CASE TEMPERATURE 10 TC08AB IGT - Gate Trigger Current - mA 100 10 VGT - Gate Trigger Voltage - V 1 1 Vsupply IGTM + + + + -40 -20 0 20 40 60 VAA = 12 V RL = 10 tp(g) = 20 s 80 100 120 Vsupply IGTM + + + + } VAA = 12 V RL = 10 tp(g) = 20 s 0 20 40 60 80 100 120 0*1 -60 0*1 -60 -40 -20 TC - Case Temperature - C Figure 1. TC - Case Temperature - C Figure 2. PRODUCT INFORMATION 2 TIC246 SERIES SILICON TRIACS DECEMBER 1971 - REVISED JUNE 2000 TYPICAL CHARACTERISTICS HOLDING CURRENT vs CASE TEMPERATURE 100 TC08AD LATCHING CURRENT vs CASE TEMPERATURE 1000 TC08AE IH - Holding Current - mA 10 IL - Latching Current - mA 100 1 Vsupply + 0*1 -60 -40 -20 0 20 VAA = 12 V IG = 0 Initiating ITM = 100 mA 40 60 80 100 120 10 Vsupply IGTM + + -40 + + -20 0 20 40 VAA = 12 V 60 80 100 120 1 -60 TC - Case Temperature - C Figure 3. TC - Case Temperature - C Figure 4. PRODUCT INFORMATION 3 TIC246 SERIES SILICON TRIACS DECEMBER 1971 - REVISED JUNE 2000 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO-220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,32 14,55 1,32 1,23 18,0 TYP. 6,1 5,6 0,97 0,66 1 2 3 1,47 1,07 14,1 12,7 2,74 2,34 5,28 4,68 2,90 2,40 0,64 0,41 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. PRODUCT INFORMATION 4 TIC246 SERIES SILICON TRIACS DECEMBER 1971 - REVISED JUNE 2000 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 2000, Power Innovations Limited PRODUCT INFORMATION 5 |
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